All MOSFET. RFP10N12 Datasheet

 

RFP10N12 Datasheet and Replacement


   Type Designator: RFP10N12
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 165 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO-220AB
 

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RFP10N12 Datasheet (PDF)

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RFP10N12

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RFP10N12

RFD10P03L, RFD10P03LSM,S E M I C O N D U C T O RRFP10P03L10A, 30V, 0.200, Logic LevelP-Channel Power MOSFETMay 1997Features Description 10A, 30V These products are P-Channel power MOSFETs manufac-tured using the MegaFET process. This process, which uses rDS(ON) = 0.200feature sizes approaching those of LSI circuits, gives opti-mum utilization of silicon, result

Datasheet: RFM15N12 , RFM15N15 , RFM25N05 , RFM25N06 , RFM5P12 , RFM5P15 , RFM8P08 , RFM8P10 , IRF9540N , RFP10N15 , RFP12N08 , RFP12N08L , RFP12N10 , RFP12N18 , RFP12N20 , RFP15N12 , RFP15N15 .

History: SIHFD020 | AM6921P

Keywords - RFP10N12 MOSFET datasheet

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