RFP10N12 Datasheet. Specs and Replacement

Type Designator: RFP10N12

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 165 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO-220AB

RFP10N12 substitution

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RFP10N12 datasheet

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RFP10N12

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RFP10N12

RFD10P03L, RFD10P03LSM, S E M I C O N D U C T O R RFP10P03L 10A, 30V, 0.200 , Logic Level P-Channel Power MOSFET May 1997 Features Description 10A, 30V These products are P-Channel power MOSFETs manufac- tured using the MegaFET process. This process, which uses rDS(ON) = 0.200 feature sizes approaching those of LSI circuits, gives opti- mum utilization of silicon, result... See More ⇒

Detailed specifications: RFM15N12, RFM15N15, RFM25N05, RFM25N06, RFM5P12, RFM5P15, RFM8P08, RFM8P10, SKD502T, RFP10N15, RFP12N08, RFP12N08L, RFP12N10, RFP12N18, RFP12N20, RFP15N12, RFP15N15

Keywords - RFP10N12 MOSFET specs

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