PHW8ND50E Specs and Replacement
Type Designator: PHW8ND50E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 147 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Id| ⓘ - Maximum Drain Current: 8.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: SOT429
PHW8ND50E substitution
- MOSFET ⓘ Cross-Reference Search
PHW8ND50E datasheet
php8nd50e phb8nd50e phw8nd50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP8ND50E, PHB8ND50E, PHW8ND50E FREDFET, Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated VDSS = 500 V Fast switching Stable off-state characteristics ID = 8.5 A High thermal cycling performance g Low thermal resistance RDS(ON) 0.85 Fast reverse... See More ⇒
php8n50e phb8n50e phw8n50e.pdf
Philips Semiconductors Product specification PowerMOS transistors PHP8N50E, PHB8N50E, PHW8N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V Stable off-state characteristics High thermal cycling performance ID = 8.5 A g Low thermal resistance RDS(ON) 0.85 s GENERAL DESCRIPTION N-c... See More ⇒
Detailed specifications: PHT6N03LT, PHT6N06LT, PHT8N06LT, PHW11N50E, PHW14N50E, PHW20N50E, PHW7N60E, PHW8N50E, IRF540N, PHW9N60E, PHX2N50E, PHX2N60E, PHX3N40E, PHX3N50E, PHX3N60E, PHX4N60E, PHX4ND40E
Keywords - PHW8ND50E MOSFET specs
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