RFP2N08 Datasheet and Replacement
Type Designator: RFP2N08
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 80 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: TO-220AB
- MOSFET Cross-Reference Search
RFP2N08 Datasheet (PDF)
rfp2n08l rfp2n10l.pdf

RFP2N08L, RFP2N10LData Sheet July 1999 File Number 2872.22A, 80V and 100V, 1.050 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 2A, 80V and 100VThe RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drivesdesigned for use with logic level (5V) driving sources i
rfp2n20l.pdf

RFP2N20LData Sheet January 20022A, 200V, 3.500 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 2A, 200VThe RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistor is specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, autom
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRFZ44 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: MCH3484 | DMN30H4D0L
Keywords - RFP2N08 MOSFET datasheet
RFP2N08 cross reference
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History: MCH3484 | DMN30H4D0L



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