All MOSFET. RFP2N08 Datasheet

 

RFP2N08 Datasheet and Replacement


   Type Designator: RFP2N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
   Package: TO-220AB
 

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RFP2N08 Datasheet (PDF)

 ..1. Size:87K  njs
rfp2n08 rfp2n10.pdf pdf_icon

RFP2N08

 0.1. Size:40K  intersil
rfp2n08l rfp2n10l.pdf pdf_icon

RFP2N08

RFP2N08L, RFP2N10LData Sheet July 1999 File Number 2872.22A, 80V and 100V, 1.050 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 2A, 80V and 100VThe RFP2N08L and RFP2N10L are N-Channel enhancement rDS(ON) = 1.050mode silicon gate power field effect transistors specifically Design Optimized for 5V Gate Drivesdesigned for use with logic level (5V) driving sources i

 9.1. Size:342K  fairchild semi
rfp2n20l.pdf pdf_icon

RFP2N08

RFP2N20LData Sheet January 20022A, 200V, 3.500 Ohm, Logic Level, FeaturesN-Channel Power MOSFET 2A, 200VThe RFP2N20L N-Channel enhancement mode silicon gate rDS(ON) = 3.500power field effect transistor is specifically designed for use Design Optimized for 5V Gate Driveswith logic level (5V) driving sources in applications such as programmable controllers, autom

Datasheet: RFP10N15 , RFP12N08 , RFP12N08L , RFP12N10 , RFP12N18 , RFP12N20 , RFP15N12 , RFP15N15 , AO4407 , RFP2N10 , RFP5P12 , RFP5P15 , RFP8P08 , RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , RHK005N03T146 .

History: PJ601CA | BRCS400N15HDP | 25N10L-TF3-T | MME70R380PRH | IRFP440R | QS8M51 | CS12N65FA9R

Keywords - RFP2N08 MOSFET datasheet

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