All MOSFET. RHK005N03T146 Datasheet

 

RHK005N03T146 Datasheet and Replacement


   Type Designator: RHK005N03T146
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 20 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: SMT3
 

 RHK005N03T146 substitution

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RHK005N03T146 Datasheet (PDF)

 ..1. Size:51K  rohm
 rhk005n03t146.pdf pdf_icon

RHK005N03T146

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications

 5.1. Size:911K  rohm
 rhk005n03fra.pdf pdf_icon

RHK005N03T146

RHK005N03FRARHK005N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK005N03FRARHK005N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbrevia

 5.2. Size:53K  rohm
 rhk005n03.pdf pdf_icon

RHK005N03T146

RHK005N03 Transistors 4V Drive Nch MOS FET RHK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) High speed switching. (2) (1)0.95 0.950.15 1.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KU Packaging specifications

 9.1. Size:913K  rohm
 rhk003n06fra.pdf pdf_icon

RHK005N03T146

RHK003N06FRARHK003N06TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK003N06FRARHK003N06 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol :

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Datasheet: RFP2N08 , RFP2N10 , RFP5P12 , RFP5P15 , RFP8P08 , RHK003N06FRA , RHK003N06T146 , RHK005N03FRA , 18N50 , RHP020N06T100 , RHP030N03T100 , RHU002N06 , RHU002N06FRA , RHU003N03 , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN .

History: SUM18N25-165 | STD5NK50ZT4 | IPA50R950CE | 6N60KG-TA3-T | SSM5N15FE | PDB3010H | UPA1764G

Keywords - RHK005N03T146 MOSFET datasheet

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