All MOSFET. RHU003N03 Datasheet

 

RHU003N03 MOSFET. Datasheet pdf. Equivalent

Type Designator: RHU003N03

SMD Transistor Code: MN

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 0.3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 6 nS

Drain-Source Capacitance (Cd): 13 pF

Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm

Package: UMT3

RHU003N03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RHU003N03 Datasheet (PDF)

1.1. rhu003n03.pdf Size:48K _update_mosfet

RHU003N03
RHU003N03

RHU003N03 Transistors 4V Drive Nch MOS FET RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol : MN (3) Drain Packaging specifications Inn

1.2. rhu003n03fra.pdf Size:911K _update_mosfet

RHU003N03
RHU003N03

RHU003N03FRA RHU003N03 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHU003N03FRA RHU003N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol : MN

 5.1. rhu002n06fra.pdf Size:1034K _update_mosfet

RHU003N03
RHU003N03

AEC-Q101 Qualified 4V Drive Nch MOSFET RHU002N06FRA Structure Dimensions (Unit : mm) Silicon N-channel UMT3 MOSFET transistor 2.0 0.9 0.3 0.2 0.7 (3) Features 1) Low on-resistance. (2) (1) 2) High ESD. 0.65 0.65 3) High-speed switching. 0.15 1.3 4) Low-voltage drive (4V). (1) Source Each lead has same dimensions 5) Drive circuits can be simple. (2) Gate Abb

5.2. rhu002n06.pdf Size:60K _update_mosfet

RHU003N03
RHU003N03

RHU002N06 Transistors Switching (60V, 200mA) RHU002N06 External dimensions (Unit : mm) Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 1.25 5) Easily designed drive circuits. 2.1 6) Easy to use in parallel. 0.1Min. Each lead has same dimensions Structure Silicon N-channel Abbreviated symbol : KP MOSFET transisto

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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