RJK005N03T146 Specs and Replacement
Type Designator: RJK005N03T146
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: SMT3
RJK005N03T146 substitution
RJK005N03T146 Specs
rjk005n03t146.pdf
RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol KV Packaging spec... See More ⇒
rjk005n03.pdf
RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol KV Packaging spec... See More ⇒
rjk005n03fra.pdf
RJK005N03 RJK005N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RJK005N03FRA RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Dr... See More ⇒
Detailed specifications: RHP030N03T100 , RHU002N06 , RHU002N06FRA , RHU003N03 , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA , 18N50 , RJK0323JPD , RJK0329DPB-00 , RJK0329DPB-01 , RJK0331DPB-00 , RJK0331DPB-01 , RJK0369DSP , RJK0371DSP , RJK03M1DPA .
Keywords - RJK005N03T146 MOSFET specs
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