RJK005N03T146 Datasheet. Specs and Replacement
Type Designator: RJK005N03T146 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 24 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: SMT3
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RJK005N03T146 substitution
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RJK005N03T146 datasheet
rjk005n03t146.pdf
RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol KV Packaging spec... See More ⇒
rjk005n03.pdf
RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol KV Packaging spec... See More ⇒
rjk005n03fra.pdf
RJK005N03 RJK005N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RJK005N03FRA RJK005N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Dr... See More ⇒
Detailed specifications: RHP030N03T100, RHU002N06, RHU002N06FRA, RHU003N03, RHU003N03FRA, RJJ0601JPE, RJJ0601JPN, RJK005N03FRA, STP65NF06, RJK0323JPD, RJK0329DPB-00, RJK0329DPB-01, RJK0331DPB-00, RJK0331DPB-01, RJK0369DSP, RJK0371DSP, RJK03M1DPA
Keywords - RJK005N03T146 MOSFET specs
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