RJK005N03T146 Datasheet and Replacement
Type Designator: RJK005N03T146
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 0.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: SMT3
RJK005N03T146 substitution
RJK005N03T146 Datasheet (PDF)
rjk005n03t146.pdf

RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KV Packaging spec
rjk005n03.pdf

RJK005N03 Transistors 2.5V Drive Nch MOS FET RJK005N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : KV Packaging spec
rjk005n03fra.pdf

RJK005N03RJK005N03FRATransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RJK005N03FRARJK005N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Dr
Datasheet: RHP030N03T100 , RHU002N06 , RHU002N06FRA , RHU003N03 , RHU003N03FRA , RJJ0601JPE , RJJ0601JPN , RJK005N03FRA , RU6888R , RJK0323JPD , RJK0329DPB-00 , RJK0329DPB-01 , RJK0331DPB-00 , RJK0331DPB-01 , RJK0369DSP , RJK0371DSP , RJK03M1DPA .
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