RJK0369DSP
MOSFET. Datasheet pdf. Equivalent
Type Designator: RJK0369DSP
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.8
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1.2
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.6
nC
trⓘ - Rise Time: 3
nS
Cossⓘ -
Output Capacitance: 155
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0156
Ohm
Package:
SOP-8
RJK0369DSP
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RJK0369DSP
Datasheet (PDF)
..1. Size:86K renesas
rjk0369dsp.pdf 
RJK0369DSP Silicon N Channel Power MOS FET Power Switching REJ03G1662-0201 Rev.2.01 Apr 24, 2008 Features Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 12.0 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PRSP0008DD-D(Package name: SOP-8)5 6 7 8D D D D56781,
8.1. Size:125K renesas
rej03g1937 rjk0364dpa02ds.pdf
Preliminary Datasheet RJK0364DPA-02 REJ03G1937-0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 5.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008
8.2. Size:125K renesas
rej03g1938 rjk0365dpa02ds.pdf
Preliminary Datasheet RJK0365DPA-02 REJ03G1938-0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.3 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008
8.3. Size:125K renesas
rej03g1939 rjk0366dpa02ds.pdf
Preliminary Datasheet RJK0366DPA-02 REJ03G1939-0110Silicon N Channel Power MOS FET Rev.1.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 7.4 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008
8.4. Size:94K renesas
rej03g1658 rjk0368dpads.pdf
Preliminary Datasheet RJK0368DPA REJ03G1658-0410Silicon N Channel Power MOS FET Rev.4.10Power Switching May 21, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 11 m typ. (at VGS = 10 V) Pb-free Outline RENESAS Package code: PWSN0008DC-A(Package name: WP
8.5. Size:125K renesas
rej03g1653 rjk0362dspds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:1174K cn vbsemi
rjk0365dpa.pdf
RJK0365DPAwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 6030 31 nC0.009 at VGS = 4.5 V 48APPLICATIONS OR-ingDFN5X6 Single DD ServerD 8 DC/DCD 7D 65G12 SS3 S
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