RJK0628JPE MOSFET. Datasheet pdf. Equivalent

   Type Designator: RJK0628JPE
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 1400 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: LDPAK

RJK0628JPE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJK0628JPE Datasheet (PDF)

..1. Size:92K renesas
rjk0628jpe.pdf

Preliminary Datasheet RJK0628JPE R07DS0336EJ020060 V - 160 A - N Channel MOS FET Rev.2.00High Speed Power Switching Aug 29, 2012Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 2.6 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 5400 pF typ Outline RENESAS Package code: PRSS0004AE-B(Packa

8.1. Size:125K renesas
rej03g1873 rjk0629dpnds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.2. Size:92K renesas
rjk0629jpe.pdf

Preliminary Datasheet RJK0629JPE R07DS1075EJ010060 V - 85 A - Silicon N Channel MOS FET Rev.1.00High Speed Power Switching Jun 17, 2013Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 3.75 m typ. Capable of 4.5 V gate drive Low input capacitance : Ciss = 4100 pF typ Outline RENESAS Package code: PRSS0004AE-B

8.3. Size:125K renesas
rej03g1875 rjk0629dpkds.pdf