RJK0628JPE. Аналоги и основные параметры
Наименование производителя: RJK0628JPE
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 192 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 160 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 1400 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0032 Ohm
Тип корпуса: LDPAK
Аналог (замена) для RJK0628JPE
- подборⓘ MOSFET транзистора по параметрам
RJK0628JPE даташит
rjk0628jpe.pdf
Preliminary Datasheet RJK0628JPE R07DS0336EJ0200 60 V - 160 A - N Channel MOS FET Rev.2.00 High Speed Power Switching Aug 29, 2012 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 2.6 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 5400 pF typ Outline RENESAS Package code PRSS0004AE-B (Packa
rej03g1873 rjk0629dpnds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rjk0629jpe.pdf
Preliminary Datasheet RJK0629JPE R07DS1075EJ0100 60 V - 85 A - Silicon N Channel MOS FET Rev.1.00 High Speed Power Switching Jun 17, 2013 Features For Automotive application AEC-Q101 compliant Low on-resistance RDS(on) = 3.75 m typ. Capable of 4.5 V gate drive Low input capacitance Ciss = 4100 pF typ Outline RENESAS Package code PRSS0004AE-B
rej03g1875 rjk0629dpkds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Другие IGBT... RJK03M3DPA, RJK03M4DPA, RJK03M5DNS, RJK03M5DPA, RJK0406JPE, RJK0601DPN-E0, RJK0602DPN-E0, RJK0603DPN-E0, IRLB3034, RJK0629JPE, RJK0630JPE, RJK0631JPD, RJK0631JPE, RJK0631JPR, RJK0632JPD, RJK0636JPD, RJK0703DPN-E0
History: SM2A01NSFP | AM40N04-30DE | KP813A | WMO05N70MM | AM30N02-59D
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Список транзисторов
Обновления
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