RJK1008DPP-E0 MOSFET. Datasheet pdf. Equivalent

   Type Designator: RJK1008DPP-E0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 820 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-220FP

RJK1008DPP-E0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJK1008DPP-E0 Datasheet (PDF)

..1. Size:82K renesas
rjk1008dpp-e0.pdf

Preliminary Datasheet RJK1008DPP-E0 R07DS0798EJ0100N-Channel Power MOSFET Rev.1.00Jun 08, 2012High-Speed Switching Use Features VDSS : 100 V RDS(on) : 11 m (Max) ID : 80 A Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)2D1. Gate2. Drain1 G3. Source12 S33Application Motor control, Lighting control, Solenoid

4.1. Size:120K renesas
rej03g1708 rjk1008dppds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

5.1. Size:120K renesas
rej03g1627 rjk1008dpnds.pdf