RJK4532DPH-E0 Specs and Replacement

Type Designator: RJK4532DPH-E0

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 36 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO-251

RJK4532DPH-E0 substitution

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RJK4532DPH-E0 datasheet

 ..1. Size:89K  renesas
rjk4532dph-e0.pdf pdf_icon

RJK4532DPH-E0

Preliminary Datasheet RJK4532DPH-E0 R07DS1038EJ0100 450V - 4A - MOS FET Rev.1.00 High Speed Power Switching Mar 15, 2013 Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZJ-B (Package name TO-251) D 4 1. Gate 2. Drain G 3. Source... See More ⇒

 5.1. Size:72K  renesas
rjk4532dpd.pdf pdf_icon

RJK4532DPH-E0

Preliminary Datasheet RJK4532DPD R07DS0682EJ0100 450V - 4A - MOS FET Rev.1.00 High Speed Power Switching Feb 24, 2012 Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25 C) Low drive current High speed switching Outline RENESAS Package code PRSS0004ZG-A D (Package name MP-3A) 4 1. Gate 2. Drain G 3. Source ... See More ⇒

 9.1. Size:88K  renesas
rej03g1540 rjk4512dpeds.pdf pdf_icon

RJK4532DPH-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. ... See More ⇒

 9.2. Size:94K  renesas
rjk4512dpp-e0.pdf pdf_icon

RJK4532DPH-E0

Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100 450V - 14A - MOS FET Rev.1.00 High Speed Power Switching Feb 12, 2013 Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25 C) Low leakage current High speed switching Outline RENESAS Package code PRSS0003AG-A (Package name TO-220FP) D 1. Gate 2. Drain G 3. Source 1 ... See More ⇒

Detailed specifications: RJK2076DPA, RJK4002DJE, RJK4002DPD, RJK4034DJE, RJK4502DJE, RJK4502DPD, RJK4512DPP-E0, RJK4532DPD, IRFB4115, RJK5002DJE, RJK5002DPD, RJK5013DPP-E0, RJK5014DPP, RJK5014DPP-E0, RJK5032DPD, RJK5032DPH-E0, RJK6002DJE

Keywords - RJK4532DPH-E0 MOSFET specs

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