Справочник MOSFET. RJK4532DPH-E0

 

RJK4532DPH-E0 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RJK4532DPH-E0
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 40.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 450 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(off)|ⓘ - Минимальное напряжение отсечки: 3.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 9 nC
   trⓘ - Время нарастания: 4.5 ns
   Cossⓘ - Выходная емкость: 36 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 2.3 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для RJK4532DPH-E0

 

 

RJK4532DPH-E0 Datasheet (PDF)

 ..1. Size:89K  renesas
rjk4532dph-e0.pdf

RJK4532DPH-E0
RJK4532DPH-E0

Preliminary Datasheet RJK4532DPH-E0 R07DS1038EJ0100450V - 4A - MOS FET Rev.1.00High Speed Power Switching Mar 15, 2013Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source

 5.1. Size:72K  renesas
rjk4532dpd.pdf

RJK4532DPH-E0
RJK4532DPH-E0

Preliminary Datasheet RJK4532DPD R07DS0682EJ0100450V - 4A - MOS FET Rev.1.00High Speed Power Switching Feb 24, 2012Features Low on-state resistance RDS(on) = 1.9 typ. (at ID = 2.0 A, VGS = 10 V, Ta = 25C) Low drive current High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source

 9.1. Size:88K  renesas
rej03g1540 rjk4512dpeds.pdf

RJK4532DPH-E0
RJK4532DPH-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.2. Size:94K  renesas
rjk4512dpp-e0.pdf

RJK4532DPH-E0
RJK4532DPH-E0

Preliminary Datasheet RJK4512DPP-E0 R07DS1010EJ0100450V - 14A - MOS FET Rev.1.00High Speed Power Switching Feb 12, 2013Features Low on-resistance RDS(on) = 0.43 typ. (at ID = 7 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003AG-A(Package name: TO-220FP)D1. Gate2. DrainG3. Source1

 9.3. Size:80K  renesas
rjk4502dpd.pdf

RJK4532DPH-E0
RJK4532DPH-E0

Preliminary Datasheet RJK4502DPD R07DS0865EJ0100450V - 2.8A - MOS FET Rev.1.00High Speed Power Switching Aug 08, 2012Features Low on-state resistance RDS(on) = 3 typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0004ZG-AD(Package name : MP-3A)41. Gate2. DrainG3. Source124. Drain3SAb

 9.4. Size:78K  renesas
r07ds0132ej rjk4518dpk.pdf

RJK4532DPH-E0
RJK4532DPH-E0

Preliminary Datasheet RJK4518DPK R07DS0132EJ0200(Previous: REJ03G1529-0100)Silicon N Channel MOS FET Rev.2.00High Speed Power Switching Sep 08, 2010Features Low on-resistance RDS(on) = 0.11 typ. (at ID = 19.5 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZE-A(Package name:TO-3P)D1. Ga

 9.5. Size:206K  renesas
rej03g1514 rjk4514dpkds.pdf

RJK4532DPH-E0
RJK4532DPH-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.6. Size:94K  renesas
rej03g1869 rjk4515dpkds.pdf

RJK4532DPH-E0
RJK4532DPH-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.7. Size:92K  renesas
rej03g1586 rjk4513dpeds.pdf

RJK4532DPH-E0
RJK4532DPH-E0

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 9.8. Size:50K  renesas
rjk4502dje.pdf

RJK4532DPH-E0
RJK4532DPH-E0

Preliminary DatasheetRJK4502DJE R07DS0843EJ0200450V - 2.8A - MOS FET Rev.2.00High Speed Power Switching Aug 10, 2012Features Low on-state resistance RDS(on) = 3 typ. (at ID = 1.4 A, VGS = 10 V, Ta = 25C) High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321Absolute Maxim

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top