All MOSFET. RJK6002DJE Datasheet

 

RJK6002DJE MOSFET. Datasheet pdf. Equivalent

Type Designator: RJK6002DJE

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.5 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 1 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 20 pF

Maximum Drain-Source On-State Resistance (Rds): 6.8 Ohm

Package: TO-92

RJK6002DJE Transistor Equivalent Substitute - MOSFET Cross-Reference Search

RJK6002DJE Datasheet (PDF)

1.1. rjk6002dje.pdf Size:59K _renesas

RJK6002DJE
RJK6002DJE

Preliminary Datasheet RJK6002DJE R07DS0845EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jul 05, 2011 Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) D 1. Source G 2. Drain 3. Gate S 3 2 1

2.1. rej03g1483 rjk6002dpdds.pdf Size:115K _renesas

RJK6002DJE
RJK6002DJE

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

2.2. rjk6002dph-e0.pdf Size:90K _renesas

RJK6002DJE
RJK6002DJE

 Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Mar 21, 2013 Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching Outline RENESAS Package code: PRSS0004ZJ-B (Package name: TO-251) D 4 1. Gate 2. Drain G 3. Source 4. D

 2.3. rjk6002dpe.pdf Size:98K _renesas

RJK6002DJE
RJK6002DJE

 Preliminary Datasheet RJK6002DPE R07DS0214EJ0100 600V - 2A - MOS FET Rev.1.00 High Speed Power Switching Jun 21, 2012 Features  Low on-resistance RDS(on) = 5.7  typ. (at ID = 1 A, VGS = 10 V, Ta = 25C)  Low drive current  High density mounting Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1) ) D 4 1. Gate 2. Drain 3. Source G 4.

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

 
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