RJK6002DJE - параметры транзистора MOSFET, его аналоги, datasheet

RJK6002DJE Datasheet (PDF)

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Preliminary DatasheetRJK6002DJE R07DS0845EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jul 05, 2011Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0003DC-A(Package name: TO-92 Mod)D1. SourceG2. Drain3. GateS321

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

6.2. Size:98K renesas
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Preliminary Datasheet RJK6002DPE R07DS0214EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Jun 21, 2012Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low drive current High density mounting Outline RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(S)-(1) )D41. Gate2. Drain3. SourceG4.

6.3. Size:90K renesas
rjk6002dph-e0.pdf pdf_icon

Preliminary Datasheet RJK6002DPH-E0 R07DS1047EJ0100600V - 2A - MOS FET Rev.1.00High Speed Power Switching Mar 21, 2013Features Low on-resistance RDS(on) = 5.7 typ. (at ID = 1 A, VGS = 10 V, Ta = 25C) Low leakage current High speed switching Outline RENESAS Package code: PRSS0004ZJ-B(Package name: TO-251) D41. Gate2. DrainG3. Source4. D

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