All MOSFET. RJP020N06T100 Datasheet

 

RJP020N06T100 Datasheet and Replacement


   Type Designator: RJP020N06T100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.24 Ohm
   Package: MPT3
 

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RJP020N06T100 Datasheet (PDF)

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RJP020N06T100

RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET MPT34.51.5 1.6 Features 1) Low On-resistance. (1) (2) (3)2) Low voltage drive (2.5V drive). 0.40.50.4 0.41.5 1.53.0(1)Gate Applications(2)DrainSwitching (3)Source Abbreviated symbol : LS Packaging specifications Inner circu

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RJP020N06T100

RJP020N06T100www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherw

 5.1. Size:54K  rohm
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RJP020N06T100

RJP020N06 Transistors 2.5V Drive Nch MOS FET RJP020N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET MPT34.51.5 1.6 Features 1) Low On-resistance. (1) (2) (3)2) Low voltage drive (2.5V drive). 0.40.50.4 0.41.5 1.53.0(1)Gate Applications(2)DrainSwitching (3)Source Abbreviated symbol : LS Packaging specifications Inner circu

Datasheet: RJL5012DPP , RJL5013DPP , RJL5014DPP , RJL6012DPP , RJL6013DPP , RJL6014DPP , RJM0404JSC , RJM0603JSC , RFP50N06 , RJU002N06FRA , RJU002N06T106 , RJU003N03FRA , RJU003N03T106 , RK3055ETL , RK7002AT116 , RK7002BM , RK7002BT116 .

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