RJU002N06T106 Specs and Replacement

Type Designator: RJU002N06T106

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: UMT3

RJU002N06T106 substitution

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RJU002N06T106 datasheet

 ..1. Size:41K  rohm
 rju002n06t106.pdf pdf_icon

RJU002N06T106

RJU002N06 Transistors 2.5V Drive Nch MOS FET RJU002N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol ML (3) Drain Packa... See More ⇒

 5.1. Size:1020K  rohm
 rju002n06fra.pdf pdf_icon

RJU002N06T106

AEC-Q101 Qualified 2.5V Drive Nch MOSFET RJU002N06 RJU002N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol ML Switching (3) Drain Packaging s... See More ⇒

 5.2. Size:145K  rohm
 rju002n06.pdf pdf_icon

RJU002N06T106

2.5V Drive Nch MOSFET RJU002N06 Structure Dimensions (Unit mm) Silicon N-channel MOS FET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol ML Switching (3) Drain Packaging specifications Inner circuit (3... See More ⇒

 9.1. Size:216K  rohm
 rju003n03t106.pdf pdf_icon

RJU002N06T106

2.5V Drive Nch MOSFET RJU003N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance. 2) Low voltage drive (2.5V drive). (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol LP Switching (3) Drain Packaging specifications and hFE Inner circu... See More ⇒

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Detailed specifications: RJL5014DPP, RJL6012DPP, RJL6013DPP, RJL6014DPP, RJM0404JSC, RJM0603JSC, RJP020N06T100, RJU002N06FRA, 5N65, RJU003N03FRA, RJU003N03T106, RK3055ETL, RK7002AT116, RK7002BM, RK7002BT116, RK7002T116, RND030N20

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