RQ1E050RPTR Specs and Replacement

Type Designator: RQ1E050RPTR

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm

Package: TSMT8

RQ1E050RPTR substitution

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RQ1E050RPTR datasheet

 ..1. Size:577K  rohm
 rq1e050rptr.pdf pdf_icon

RQ1E050RPTR

RQ1E050RP Pch -30V -5A Power MOSFET Datasheet lOutline (8) VDSS -30V (7) TSMT8 (6) (5) RDS(on) (Max.) 31mW (1) ID -5A (2) (3) PD 1.5W (4) lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) Built-in G-S Protection Diode. (2) Source (6) Drain (3) Source (7) Drain 3) Small Surface Mount Package (TSMT8). (4) Gate (8) Drain 4) Pb-free lea... See More ⇒

 5.1. Size:388K  rohm
 rq1e050rp.pdf pdf_icon

RQ1E050RPTR

4V Drive Pch MOSFET RQ1E050RP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. (1) (2) (3) (4) 2) High power package. 3) 4V drive. Abbreviated symbol UD Application Switching Inner circuit (8) (7) (6) (5) Packaging specifications Package Taping 2 Type Code TR (1) Source (2) Source Ba... See More ⇒

 9.1. Size:344K  rohm
 rq1e070rp.pdf pdf_icon

RQ1E050RPTR

4V Drive Pch MOSFET RQ1E070RP Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low On-resistance. 2) High power package. (1) (2) (3) (4) 3) 4V drive. Abbreviated symbol UE Application Switching Inner circuit Packaging specifications (8) (7) (6) (5) Package Taping Type Code TR Basic ordering unit (pieces) 300... See More ⇒

 9.2. Size:1239K  rohm
 rq1e075xn.pdf pdf_icon

RQ1E050RPTR

Data Sheet 4V Drive Nch MOSFET RQ1E075XN Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT8 (8) (7) (6) (5) Features 1) Low on-resistance. (1) (2) (3) (4) 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (TSMT8). Abbreviated symbol XR Application Switching Packaging specifications Inner circuit (8) (7) (6) (5) Package Taping ... See More ⇒

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Detailed specifications: RK7002T116, RND030N20, RP1A090ZPTR, RP1E050RPTR, RP1E090RPTR, RP1E100RPTR, RQ1A060ZPTR, RQ1A070ZPTR, IRF1407, RQ3E070BN, RQ3E080BN, RQ3E080GN, RQ3E100BN, RQ3E100GN, RQ3E100MN, RQ3E120AT, RQ3E120BN

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