RQ3E120AT Specs and Replacement
Type Designator: RQ3E120AT
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 30 nS
Cossⓘ -
Output Capacitance: 550 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: HSMT8
- MOSFET ⓘ Cross-Reference Search
RQ3E120AT datasheet
..1. Size:2504K rohm
rq3e120at.pdf 
RQ3E120AT Datasheet Pch -30V -12A Middle Power MOSFET lOutline l HSMT8 VDSS -30V RDS(on)(Max.) 8.0m ID 12A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen F... See More ⇒
7.1. Size:474K rohm
rq3e120gn.pdf
RQ3E120GN Nch 30V 12A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 8.8mW RDS(on) at 4.5V (Max.) 11.8mW ID 12A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY ... See More ⇒
7.2. Size:2664K rohm
rq3e120bn.pdf
RQ3E120BN Datasheet Nch 30V 12A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 9.3m ID 12A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagi... See More ⇒
9.1. Size:2687K rohm
rq3e150bn.pdf
RQ3E150BN Datasheet Nch 30V 15A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 5.3m ID 15A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagi... See More ⇒
9.2. Size:473K rohm
rq3e100gn.pdf
RQ3E100GN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 11.7mW RDS(on) at 4.5V (Max.) 15.7mW ID 10A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY... See More ⇒
9.3. Size:475K rohm
rq3e150mn.pdf
RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTI... See More ⇒
9.4. Size:2698K rohm
rq3e180aj.pdf
RQ3E180AJ Datasheet Nch 30V 18A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 4.5m ID 18A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant lPackaging specifications l... See More ⇒
9.5. Size:2739K rohm
rq3e160ad.pdf
RQ3E160AD Datasheet Nch 30V 16A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 4.5m ID 16A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package. 4) Pb-free lead plating ; RoHS co... See More ⇒
9.6. Size:2816K rohm
rq3e130bn.pdf
RQ3E130BN Datasheet Nch 30V 13A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 6.0m ID 13A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagi... See More ⇒
9.7. Size:473K rohm
rq3e150gn.pdf
RQ3E150GN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 6.1mW RDS(on) at 4.5V (Max.) 8.1mW ID 15A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 BODY DIODE 4) Halogen F... See More ⇒
9.8. Size:476K rohm
rq3e130mn.pdf
RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTI... See More ⇒
9.9. Size:474K rohm
rq3e180gn.pdf
RQ3E180GN Nch 30V 18A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 4.3mW RDS(on) at 4.5V (Max.) 5.5mW ID 18A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D... See More ⇒
9.10. Size:465K rohm
rq3e100mn.pdf
RQ3E100MN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 12.3mW RDS(on) at 4.5V (Max.) 16.8mW ID 10A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTEC... See More ⇒
9.11. Size:2665K rohm
rq3e100bn.pdf
RQ3E100BN Datasheet Nch 30V 10A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 10.4m ID 10A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackag... See More ⇒
Detailed specifications: RQ1A070ZPTR, RQ1E050RPTR, RQ3E070BN, RQ3E080BN, RQ3E080GN, RQ3E100BN, RQ3E100GN, RQ3E100MN, 18N50, RQ3E120BN, RQ3E120GN, RQ3E130BN, RQ3E130MN, RQ3E150BN, RQ3E150GN, RQ3E150MN, RQ3E160AD
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
