RQ3E120AT. Аналоги и основные параметры
Наименование производителя: RQ3E120AT
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 550 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.008 Ohm
Тип корпуса: HSMT8
Аналог (замена) для RQ3E120AT
- подборⓘ MOSFET транзистора по параметрам
RQ3E120AT даташит
..1. Size:2504K rohm
rq3e120at.pdf 
RQ3E120AT Datasheet Pch -30V -12A Middle Power MOSFET lOutline l HSMT8 VDSS -30V RDS(on)(Max.) 8.0m ID 12A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen F
7.1. Size:474K rohm
rq3e120gn.pdf 
RQ3E120GN Nch 30V 12A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 8.8mW RDS(on) at 4.5V (Max.) 11.8mW ID 12A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY
7.2. Size:2664K rohm
rq3e120bn.pdf 
RQ3E120BN Datasheet Nch 30V 12A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 9.3m ID 12A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagi
9.1. Size:2687K rohm
rq3e150bn.pdf 
RQ3E150BN Datasheet Nch 30V 15A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 5.3m ID 15A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagi
9.2. Size:473K rohm
rq3e100gn.pdf 
RQ3E100GN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 11.7mW RDS(on) at 4.5V (Max.) 15.7mW ID 10A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY
9.3. Size:475K rohm
rq3e150mn.pdf 
RQ3E150MN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 6.7mW RDS(on) at 4.5V (Max.) 8.9mW ID 15A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTI
9.4. Size:2698K rohm
rq3e180aj.pdf 
RQ3E180AJ Datasheet Nch 30V 18A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 4.5m ID 18A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating ; RoHS compliant lPackaging specifications l
9.5. Size:2739K rohm
rq3e160ad.pdf 
RQ3E160AD Datasheet Nch 30V 16A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 4.5m ID 16A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package. 4) Pb-free lead plating ; RoHS co
9.6. Size:2816K rohm
rq3e130bn.pdf 
RQ3E130BN Datasheet Nch 30V 13A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 6.0m ID 13A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackagi
9.7. Size:473K rohm
rq3e150gn.pdf 
RQ3E150GN Nch 30V 15A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 6.1mW RDS(on) at 4.5V (Max.) 8.1mW ID 15A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 BODY DIODE 4) Halogen F
9.8. Size:476K rohm
rq3e130mn.pdf 
RQ3E130MN Nch 30V 13A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 8.1mW RDS(on) at 4.5V (Max.) 11.6mW ID 13A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTI
9.9. Size:474K rohm
rq3e180gn.pdf 
RQ3E180GN Nch 30V 18A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 4.3mW RDS(on) at 4.5V (Max.) 5.5mW ID 18A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D
9.10. Size:465K rohm
rq3e100mn.pdf 
RQ3E100MN Nch 30V 10A Power MOSFET Datasheet lOutline VDSS 30V HSMT8 RDS(on) at 10V (Max.) 12.3mW RDS(on) at 4.5V (Max.) 16.8mW ID 10A PD 2.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Small Mold Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTEC
9.11. Size:2665K rohm
rq3e100bn.pdf 
RQ3E100BN Datasheet Nch 30V 10A Middle Power MOSFET lOutline l HSMT8 VDSS 30V RDS(on)(Max.) 10.4m ID 10A PD 2W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power Package (HSMT8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free. lPackag
Другие MOSFET... RQ1A070ZPTR
, RQ1E050RPTR
, RQ3E070BN
, RQ3E080BN
, RQ3E080GN
, RQ3E100BN
, RQ3E100GN
, RQ3E100MN
, 18N50
, RQ3E120BN
, RQ3E120GN
, RQ3E130BN
, RQ3E130MN
, RQ3E150BN
, RQ3E150GN
, RQ3E150MN
, RQ3E160AD
.
