RQ3E120AT
Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: RQ3E120AT
Маркировка: E120AT
Тип транзистора: MOSFET
Полярность: P
Pdⓘ - Максимальная рассеиваемая мощность: 2
W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30
V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20
V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5
V
|Id|ⓘ - Максимально
допустимый постоянный ток стока: 12
A
Tjⓘ - Максимальная температура канала: 150
°C
Qgⓘ -
Общий заряд затвора: 62
nC
trⓘ -
Время нарастания: 30
ns
Cossⓘ - Выходная емкость: 550
pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.008
Ohm
Тип корпуса:
HSMT8
- подбор MOSFET транзистора по параметрам
RQ3E120AT
Datasheet (PDF)
..1. Size:2504K rohm
rq3e120at.pdf 
RQ3E120ATDatasheetPch -30V -12A Middle Power MOSFETlOutlinel HSMT8VDSS-30VRDS(on)(Max.) 8.0m ID 12A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen F
7.1. Size:474K rohm
rq3e120gn.pdf 
RQ3E120GN Nch 30V 12A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)8.8mWRDS(on) at 4.5V (Max.)11.8mWID12APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY
7.2. Size:2664K rohm
rq3e120bn.pdf 
RQ3E120BNDatasheetNch 30V 12A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 9.3m ID 12A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagi
9.1. Size:2687K rohm
rq3e150bn.pdf 
RQ3E150BNDatasheetNch 30V 15A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 5.3m ID 15A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagi
9.2. Size:473K rohm
rq3e100gn.pdf 
RQ3E100GN Nch 30V 10A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)11.7mWRDS(on) at 4.5V (Max.)15.7mWID10APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY
9.3. Size:475K rohm
rq3e150mn.pdf 
RQ3E150MN Nch 30V 15A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)6.7mWRDS(on) at 4.5V (Max.)8.9mWID15APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain *1 ESD PROTECTI
9.4. Size:2698K rohm
rq3e180aj.pdf 
RQ3E180AJDatasheetNch 30V 18A Middle Power MOSFETlOutlinel HSMT8VDSS 30VRDS(on)(Max.) 4.5m ID 18A PD 2W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package.3) Pb-free lead plating ; RoHS compliantlPackaging specificationsl
9.5. Size:2739K rohm
rq3e160ad.pdf 
RQ3E160ADDatasheetNch 30V 16A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 4.5m ID 16A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package.4) Pb-free lead plating ; RoHS co
9.6. Size:2816K rohm
rq3e130bn.pdf 
RQ3E130BNDatasheetNch 30V 13A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 6.0m ID 13A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackagi
9.7. Size:473K rohm
rq3e150gn.pdf 
RQ3E150GN Nch 30V 15A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)6.1mWRDS(on) at 4.5V (Max.)8.1mWID15APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 BODY DIODE 4) Halogen F
9.8. Size:476K rohm
rq3e130mn.pdf 
RQ3E130MN Nch 30V 13A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)8.1mWRDS(on) at 4.5V (Max.)11.6mWID13APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain *1 ESD PROTECTI
9.9. Size:474K rohm
rq3e180gn.pdf 
RQ3E180GN Nch 30V 18A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)4.3mWRDS(on) at 4.5V (Max.)5.5mWID18APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D
9.10. Size:465K rohm
rq3e100mn.pdf 
RQ3E100MN Nch 30V 10A Power MOSFET DatasheetlOutlineVDSS30VHSMT8RDS(on) at 10V (Max.)12.3mWRDS(on) at 4.5V (Max.)16.8mWID10APD2.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSMT8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain *1 ESD PROTEC
9.11. Size:2665K rohm
rq3e100bn.pdf 
RQ3E100BNDatasheetNch 30V 10A Middle Power MOSFETlOutlinel HSMT8VDSS30VRDS(on)(Max.) 10.4m ID 10A PD2W lInner circuitllFeaturesl1) Low on - resistance.2) High Power Package (HSMT8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free.lPackag
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.
History: STW12NA50
| CEP75N06
| RU60E16R
| ME7607-G
| SM3425NHQA
| FTK10N60P
