RQ5E035BN MOSFET. Datasheet pdf. Equivalent
Type Designator: RQ5E035BN
Marking Code: ZS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 3.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6 nC
trⓘ - Rise Time: 7.5 nS
Cossⓘ - Output Capacitance: 40 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.037 Ohm
Package: TSMT3
RQ5E035BN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RQ5E035BN Datasheet (PDF)
rq5e035bn.pdf
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rq5e035at.pdf
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rq5e040aj.pdf
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rq5e050at.pdf
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rq5e025at.pdf
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