RQ6E050AT Datasheet and Replacement
Type Designator: RQ6E050AT
Marking Code: VB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 20.8 nC
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: TSMT6
RQ6E050AT substitution
RQ6E050AT Datasheet (PDF)
rq6e050at.pdf

RQ6E050ATDatasheetPch -30V -5A Power MOSFETlOutlinel TSMT6VDSS-30VRDS(on)(Max.) 27m ID 5.0A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package (TSMT6).3) Pb-free lead plating ; RoHS compliantlPackaging specifica
rq6e055bn.pdf

RQ6E055BNDatasheetNch 30V 5.5A Power MOSFETlOutlinel TSMT6VDSS30VRDS(on)(Max.) 25m ID 5.5A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSMT6).4) Pb-free lead plating ; Ro
rq6e030at.pdf

RQ6E030ATDatasheetPch -30V -3.0A Middle Power MOSFETlOutlinel TSMT6VDSS-30VRDS(on)(Max.) 91m ID 3.0A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package (TSMT6).3) Pb-free lead plating ; RoHS compliantlPackaging
rq6e035at.pdf

RQ6E035ATDatasheetPch -30V -3.5A Power MOSFETlOutlinel TSMT6VDSS-30VRDS(on)(Max.) 50m ID 3.5A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSMT6).4) Pb-free lead plating ;
Datasheet: RQ5E035BN , RQ5E040AJ , RQ5H020SP , RQ5L015SP , RQ6C050UN , RQ6E030AT , RQ6E035AT , RQ6E045BN , 2N7002 , RQ6E055BN , RQ6P015SP , RQ7E055AT , RRQ020P03 , RRS110N03TB1 , RS1E130GN , RS1E150GN , RS1E170GN .
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