All MOSFET. RQ6E050AT Datasheet

 

RQ6E050AT Datasheet and Replacement


   Type Designator: RQ6E050AT
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
   Package: TSMT6
      - MOSFET Cross-Reference Search

 

RQ6E050AT Datasheet (PDF)

 ..1. Size:2649K  rohm
 rq6e050at.pdf pdf_icon

RQ6E050AT

RQ6E050ATDatasheetPch -30V -5A Power MOSFETlOutlinel TSMT6VDSS-30VRDS(on)(Max.) 27m ID 5.0A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package (TSMT6).3) Pb-free lead plating ; RoHS compliantlPackaging specifica

 8.1. Size:2706K  rohm
 rq6e055bn.pdf pdf_icon

RQ6E050AT

RQ6E055BNDatasheetNch 30V 5.5A Power MOSFETlOutlinel TSMT6VDSS30VRDS(on)(Max.) 25m ID 5.5A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSMT6).4) Pb-free lead plating ; Ro

 9.1. Size:2714K  rohm
 rq6e030at.pdf pdf_icon

RQ6E050AT

RQ6E030ATDatasheetPch -30V -3.0A Middle Power MOSFETlOutlinel TSMT6VDSS-30VRDS(on)(Max.) 91m ID 3.0A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package (TSMT6).3) Pb-free lead plating ; RoHS compliantlPackaging

 9.2. Size:2653K  rohm
 rq6e035at.pdf pdf_icon

RQ6E050AT

RQ6E035ATDatasheetPch -30V -3.5A Power MOSFETlOutlinel TSMT6VDSS-30VRDS(on)(Max.) 50m ID 3.5A PD1.25W lInner circuitllFeaturesl1) Low on - resistance.2) Built-in G-S Protection Diode.3) Small Surface Mount Package (TSMT6).4) Pb-free lead plating ;

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Keywords - RQ6E050AT MOSFET datasheet

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