All MOSFET. RQ6P015SP Datasheet

 

RQ6P015SP Datasheet and Replacement


   Type Designator: RQ6P015SP
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 1.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TSMT6
 

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RQ6P015SP Datasheet (PDF)

 ..1. Size:796K  rohm
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RQ6P015SP

RQ6P015SP Pch -100V -1.5A Power MOSFET Data SheetlOutline(6) VDSS-100VTSMT6 (5) (4) RDS(on) (Max.)470mWID (1) -1.5A(2) PD1.25W(3) lFeatures lInner circuit1) Low on - resistance.(1) Drain (2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compl

Datasheet: RQ5H020SP , RQ5L015SP , RQ6C050UN , RQ6E030AT , RQ6E035AT , RQ6E045BN , RQ6E050AT , RQ6E055BN , AO3407 , RQ7E055AT , RRQ020P03 , RRS110N03TB1 , RS1E130GN , RS1E150GN , RS1E170GN , RS1E200AH , RS1E200BN .

History: PE532DY | OSG60R1K8PF

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