RS1E150GN Datasheet and Replacement
Type Designator: RS1E150GN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 160 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0088 Ohm
Package: HSOP8
- MOSFET Cross-Reference Search
RS1E150GN Datasheet (PDF)
rs1e150gn.pdf

RS1E150GN Nch 30V 15A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)8.8mWRDS(on) at 4.5V (Max.)11.4mWID15APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free *1 BOD
rs1e130gn.pdf

RS1E130GN Nch 30V 13A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)11.7mWRDS(on) at 4.5V (Max.)15.2mWID13APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain (4) Gate (8) Drain 3) Pb-free lead plating ; RoHS compliant*1 BODY DIODE 4) Hal
rs1e170gn.pdf

RS1E170GN Nch 30V 17A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)6.7mWRDS(on) at 4.5V (Max.)8.7mWID17APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free *1 BODY DI
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SJ473-01S | IRF7759L2TR1PBF
Keywords - RS1E150GN MOSFET datasheet
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History: 2SJ473-01S | IRF7759L2TR1PBF



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