RS1E170GN Datasheet and Replacement
Type Designator: RS1E170GN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.8 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0067 Ohm
Package: HSOP8
RS1E170GN substitution
RS1E170GN Datasheet (PDF)
rs1e170gn.pdf

RS1E170GN Nch 30V 17A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)6.7mWRDS(on) at 4.5V (Max.)8.7mWID17APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free *1 BODY DI
rs1e130gn.pdf

RS1E130GN Nch 30V 13A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)11.7mWRDS(on) at 4.5V (Max.)15.2mWID13APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain (4) Gate (8) Drain 3) Pb-free lead plating ; RoHS compliant*1 BODY DIODE 4) Hal
rs1e150gn.pdf

RS1E150GN Nch 30V 15A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)8.8mWRDS(on) at 4.5V (Max.)11.4mWID15APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free *1 BOD
Datasheet: RQ6E050AT , RQ6E055BN , RQ6P015SP , RQ7E055AT , RRQ020P03 , RRS110N03TB1 , RS1E130GN , RS1E150GN , IRF3205 , RS1E200AH , RS1E200BN , RS1E200GN , RS1E240BN , RS1E240GN , RS1E280BN , RS1E280GN , RS1E300GN .
History: SI8410DB | IPB80N06S2L-11 | AP30T10GK
Keywords - RS1E170GN MOSFET datasheet
RS1E170GN cross reference
RS1E170GN equivalent finder
RS1E170GN lookup
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History: SI8410DB | IPB80N06S2L-11 | AP30T10GK



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