RS1E320GN MOSFET. Datasheet pdf. Equivalent
Type Designator: RS1E320GN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42.8 nC
trⓘ - Rise Time: 15.6 nS
Cossⓘ - Output Capacitance: 740 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: HSOP8
RS1E320GN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RS1E320GN Datasheet (PDF)
rs1e320gn.pdf
RS1E320GN Nch 30V 32A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)1.9mWRDS(on) at 4.5V (Max.)2.4mWID32APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D
rs1e300gn.pdf
RS1E300GN Nch 30V 30A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)2.2mWRDS(on) at 4.5V (Max.)2.8mWID30APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D
rs1e350bn.pdf
RS1E350BNDatasheetNch 30V 35A Middle Power MOSFETlOutlinel HSOP8VDSS30VRDS(on)(Max.) 1.7m ID 35A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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