RS1E320GN Datasheet and Replacement
Type Designator: RS1E320GN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 42.8 nC
trⓘ - Rise Time: 15.6 nS
Cossⓘ - Output Capacitance: 740 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: HSOP8
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RS1E320GN Datasheet (PDF)
rs1e320gn.pdf

RS1E320GN Nch 30V 32A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)1.9mWRDS(on) at 4.5V (Max.)2.4mWID32APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D
rs1e300gn.pdf

RS1E300GN Nch 30V 30A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)2.2mWRDS(on) at 4.5V (Max.)2.8mWID30APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D
rs1e350bn.pdf

RS1E350BNDatasheetNch 30V 35A Middle Power MOSFETlOutlinel HSOP8VDSS30VRDS(on)(Max.) 1.7m ID 35A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free
Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , IRFZ48N , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .
History: 2SJ473-01S | SD201DC
Keywords - RS1E320GN MOSFET datasheet
RS1E320GN cross reference
RS1E320GN equivalent finder
RS1E320GN lookup
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History: 2SJ473-01S | SD201DC



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