RS1E320GN Specs and Replacement
Type Designator: RS1E320GN
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 32 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15.6 nS
Cossⓘ - Output Capacitance: 740 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0019 Ohm
Package: HSOP8
RS1E320GN substitution
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RS1E320GN datasheet
rs1e320gn.pdf
RS1E320GN Nch 30V 32A Power MOSFET Datasheet lOutline VDSS 30V HSOP8 RDS(on) at 10V (Max.) 1.9mW RDS(on) at 4.5V (Max.) 2.4mW ID 32A PD 3.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D... See More ⇒
rs1e300gn.pdf
RS1E300GN Nch 30V 30A Power MOSFET Datasheet lOutline VDSS 30V HSOP8 RDS(on) at 10V (Max.) 2.2mW RDS(on) at 4.5V (Max.) 2.8mW ID 30A PD 3.0W lFeatures lInner circuit 1) Low on - resistance. (1) Source (5) Drain 2) High Power Package (HSOP8). (2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant (4) Gate (8) Drain 4) Halogen Free *1 BODY D... See More ⇒
rs1e350bn.pdf
RS1E350BN Datasheet Nch 30V 35A Middle Power MOSFET lOutline l HSOP8 VDSS 30V RDS(on)(Max.) 1.7m ID 35A PD 3W lInner circuit l lFeatures l 1) Low on - resistance. 2) High Power small mold Package (HSOP8). 3) Pb-free lead plating ; RoHS compliant. 4) Halogen Free... See More ⇒
Detailed specifications: RS1E200AH, RS1E200BN, RS1E200GN, RS1E240BN, RS1E240GN, RS1E280BN, RS1E280GN, RS1E300GN, IRF640, RS1E350BN, RS1G120MN, RS1G150MN, RS1G180MN, RS1G260MN, RS1G300GN, RS3E075AT, RSD046P05
Keywords - RS1E320GN MOSFET specs
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