All MOSFET. RS1E350BN Datasheet

 

RS1E350BN Datasheet and Replacement


   Type Designator: RS1E350BN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 215 nS
   Cossⓘ - Output Capacitance: 940 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0017 Ohm
   Package: HSOP8
 

 RS1E350BN substitution

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RS1E350BN Datasheet (PDF)

 ..1. Size:2733K  rohm
 rs1e350bn.pdf pdf_icon

RS1E350BN

RS1E350BNDatasheetNch 30V 35A Middle Power MOSFETlOutlinel HSOP8VDSS30VRDS(on)(Max.) 1.7m ID 35A PD3W lInner circuitllFeaturesl1) Low on - resistance.2) High Power small mold Package (HSOP8).3) Pb-free lead plating ; RoHS compliant.4) Halogen Free

 9.1. Size:475K  rohm
 rs1e300gn.pdf pdf_icon

RS1E350BN

RS1E300GN Nch 30V 30A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)2.2mWRDS(on) at 4.5V (Max.)2.8mWID30APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D

 9.2. Size:476K  rohm
 rs1e320gn.pdf pdf_icon

RS1E350BN

RS1E320GN Nch 30V 32A Power MOSFET DatasheetlOutlineVDSS30VHSOP8RDS(on) at 10V (Max.)1.9mWRDS(on) at 4.5V (Max.)2.4mWID32APD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoHS compliant(4) Gate (8) Drain 4) Halogen Free*1 BODY D

Datasheet: RS1E200BN , RS1E200GN , RS1E240BN , RS1E240GN , RS1E280BN , RS1E280GN , RS1E300GN , RS1E320GN , IRF1404 , RS1G120MN , RS1G150MN , RS1G180MN , RS1G260MN , RS1G300GN , RS3E075AT , RSD046P05 , RSD046P05FRA .

History: 12N70G-TF3-T | RS1G150MN | BRCS120N06SYM | AO4438 | OSG80R300KF | RJK0214DPA | IRFD113PBF

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