RS1G150MN Datasheet and Replacement
Type Designator: RS1G150MN
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 205 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0106 Ohm
Package: HSOP8
RS1G150MN substitution
RS1G150MN Datasheet (PDF)
rs1g150mn.pdf
RS1G150MN Nch 40V 15A Power MOSFET DatasheetlOutlineVDSS40V(8) HSOP8(7) (6) RDS(on) at 10V (Max.)10.6mW(5) RDS(on) at 4.5V (Max.)13.3mW(1) ID15A (2) (3) (4) PD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoH
rs1g180mn.pdf
RS1G180MN Nch 40V 18A Power MOSFET DatasheetlOutlineVDSS40V (8) HSOP8(7) (6) RDS(on) at 10V (Max.)7.0mW(5) RDS(on) at 4.5V (Max.)9.2mW(1) ID (2) 18A(3) (4) PD3.0WlFeatures lInner circuit1) Low on - resistance.2) High Power Small Mold Package (HSOP8).(1) Source (5) Drain (2) Source (6) Drain 3) Pb-free lead plating ; RoHS compliant(3) Source (7
rs1g120mn.pdf
RS1G120MN Nch 40V 12A Power MOSFET DatasheetlOutlineVDSS40V (8) HSOP8(7) (6) RDS(on) at 10V (Max.)16.2mW(5) RDS(on) at 4.5V (Max.)20.7mW(1) (2) ID12A(3) (4) PD3.0WlFeatures lInner circuit1) Low on - resistance.(1) Source (5) Drain 2) High Power Small Mold Package (HSOP8).(2) Source (6) Drain (3) Source (7) Drain 3) Pb-free lead plating ; RoH
Datasheet: RS1E240BN , RS1E240GN , RS1E280BN , RS1E280GN , RS1E300GN , RS1E320GN , RS1E350BN , RS1G120MN , IRFB4110 , RS1G180MN , RS1G260MN , RS1G300GN , RS3E075AT , RSD046P05 , RSD046P05FRA , RSD050N06FRA , RSD050N06TL .
History: FIR18N50FG
Keywords - RS1G150MN MOSFET datasheet
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: FIR18N50FG
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