RS3E075AT MOSFET. Datasheet pdf. Equivalent
Type Designator: RS3E075AT
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 220 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0235 Ohm
Package: SOP-8
RS3E075AT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RS3E075AT Datasheet (PDF)
rs3e075at.pdf
RS3E075ATDatasheetPch -30V -7.5A Middle Power MOSFETlOutlinel SOP8VDSS-30VRDS(on)(Max.) 23.5m ID 7.5A PD2.0W lInner circuitllFeaturesl1) Low on - resistance.2) Small Surface Mount Package (SOP8).3) Pb-free lead plating ; RoHS compliant.lPackaging
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