All MOSFET. RSD046P05FRA Datasheet

 

RSD046P05FRA Datasheet and Replacement


   Type Designator: RSD046P05FRA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.155 Ohm
   Package: SC-63
 

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RSD046P05FRA Datasheet (PDF)

 ..1. Size:454K  rohm
 rsd046p05fra.pdf pdf_icon

RSD046P05FRA

RSD046P05FRA Pch 45V 4.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS-45VCPT3(SC-63)RDS(on) (Max.)155mWID-4.5A(2) (1) (3) PD15WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Drive circuits can be simple.(3) Source 4) Parallel use is easy.*1 ESD PROTECTION DIODE *2 BODY DIODE 5)

 5.1. Size:385K  rohm
 rsd046p05.pdf pdf_icon

RSD046P05FRA

RSD046P05 Pch 45V 4.5A Power MOSFET DatasheetlOutlineVDSS-45VCPT3(SC-63)RDS(on) (Max.)155mWID-4.5A(2) (1) (3) PD15WlFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain 3) Drive circuits can be simple.(3) Source 4) Parallel use is easy.*1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead plating ;

Datasheet: RS1E350BN , RS1G120MN , RS1G150MN , RS1G180MN , RS1G260MN , RS1G300GN , RS3E075AT , RSD046P05 , IRFB4227 , RSD050N06FRA , RSD050N06TL , RSD050N10FRA , RSD080N06FRA , RSD080P05FRA , RSD100N10FRA , RSD131P10 , RSD131P10FRA .

History: SSM3K335R | NVMFS5C404N | KRF7379

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