All MOSFET. RSD050N06TL Datasheet

 

RSD050N06TL Datasheet and Replacement


   Type Designator: RSD050N06TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.109 Ohm
   Package: SC-63
 

 RSD050N06TL substitution

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RSD050N06TL Datasheet (PDF)

 ..1. Size:1225K  rohm
 rsd050n06tl.pdf pdf_icon

RSD050N06TL

Data Sheet4V Drive Nch MOSFET RSD050N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner circ

 5.1. Size:1067K  rohm
 rsd050n06fra.pdf pdf_icon

RSD050N06TL

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD050N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specif

 5.2. Size:1224K  rohm
 rsd050n06.pdf pdf_icon

RSD050N06TL

Data Sheet4V Drive Nch MOSFET RSD050N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner circ

 7.1. Size:505K  rohm
 rsd050n10.pdf pdf_icon

RSD050N06TL

4V Drive Nch MOSFET RSD050N10Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed.3) Drive circuits can be simple. 3) Parallel use is easy. 9 ApplicationsSwitchingPackaging specifications Inner circuitPackage

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History: BRCS2305MC | HGK105N15M

Keywords - RSD050N06TL MOSFET datasheet

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