RSD080P05FRA
MOSFET. Datasheet pdf. Equivalent
Type Designator: RSD080P05FRA
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 45
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 8
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 9
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 160
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.091
Ohm
Package:
SC-63
RSD080P05FRA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSD080P05FRA
Datasheet (PDF)
..1. Size:1413K rohm
rsd080p05fra.pdf
Data SheetAEC-Q101 Qualified4V Drive Pch MOSFET RSD080P05RSD080P05FRAStructure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Pack
5.1. Size:1210K rohm
rsd080p05.pdf
Data Sheet4V Drive Pch MOSFET RSD080P05Structure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Packaging specifications Inner cir
8.1. Size:1158K rohm
rsd080n06.pdf
Data Sheet4V Drive Nch MOSFET RSD080N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) 4V drive.0.753) High power package(CPT3).0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1Package TapingTypeCode T
8.2. Size:1367K rohm
rsd080n06fra.pdf
Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD080N06RSD080N06FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) 4V drive.0.753) High power package(CPT3).0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit
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