All MOSFET. RSD140P06FRA Datasheet

 

RSD140P06FRA Datasheet and Replacement


   Type Designator: RSD140P06FRA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.084 Ohm
   Package: SC-63
 

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RSD140P06FRA Datasheet (PDF)

 ..1. Size:1413K  rohm
 rsd140p06fra.pdf pdf_icon

RSD140P06FRA

Data SheetAEC-Q101 Qualified4V Drive Pch MOSFET RSD140P06RSD140P06FRAStructure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Pack

 5.1. Size:1213K  rohm
 rsd140p06.pdf pdf_icon

RSD140P06FRA

Data Sheet4V Drive Pch MOSFET RSD140P06Structure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Packaging specifications Inner cir

Datasheet: RSD050N06FRA , RSD050N06TL , RSD050N10FRA , RSD080N06FRA , RSD080P05FRA , RSD100N10FRA , RSD131P10 , RSD131P10FRA , K3569 , RSD150N06FRA , RSD160P05FRA , RSD175N10FRA , RSD200N10TL , RSD201N10 , RSD201N10FRA , RSD221N06 , RSD221N06FRA .

History: DH028N03 | STU3N62K3 | OSG60R150KF | AO4614-30V | 2SK1922 | FMP16N60ES | SVD50N06T

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