PMBF4416
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMBF4416
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 0.015
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 0.8
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 150
Ohm
Package:
SOT23
PMBF4416
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMBF4416
Datasheet (PDF)
..1. Size:69K philips
pmbf4416 pmbf4416a cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBF4416; PMBF4416AN-channel field-effect transistorApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistor PMBF4416; PMBF4416AFEATURES Low noise Interchangeability of drain andsource connections High gain.3handbook, halfpageDESC
9.1. Size:304K philips
pmbf4391 pmbf4392 pmbf4393 cnv.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPMBF4391; PMBF4392; PMBF4393N-channel FETsProduct specification April 1995NXP Semiconductors Product specificationPMBF4391;N-channel FETsPMBF4392; PMBF4393DESCRIPTIONSymmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film c
9.2. Size:36K philips
pmbf4391 pmbf4392 pmbf4393 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBF4391; PMBF4392;PMBF4393N-channel FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBF4391;N-channel FETsPMBF4392; PMBF4393DESCRIPTIONSymmetrical silicon n-channeldepletion type junction field-effecttransistors on a plasticmicrominiature envelope intended f
Datasheet: PHX6NA60E
, PHX6ND50E
, PHX7N60E
, PHX8N50E
, PHX8ND50E
, PMBF4391
, PMBF4392
, PMBF4393
, STP75NF75
, PMBF4416A
, PMBF5484
, PMBF5485
, PMBF5486
, PMBFJ108
, PMBFJ109
, PMBFJ110
, PMBFJ111
.