PMBF4416A Datasheet and Replacement
Type Designator: PMBF4416A
Type of Transistor: JFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 35 V
|Id| ⓘ - Maximum Drain Current: 0.015 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 150 Ohm
Package: SOT23
PMBF4416A substitution
PMBF4416A Datasheet (PDF)
pmbf4416 pmbf4416a cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPMBF4416; PMBF4416AN-channel field-effect transistorApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel field-effect transistor PMBF4416; PMBF4416AFEATURES Low noise Interchangeability of drain andsource connections High gain.3handbook, halfpageDESC
pmbf4391 pmbf4392 pmbf4393 cnv.pdf

DISCRETE SEMICONDUCTORS DATA SHEETPMBF4391; PMBF4392; PMBF4393N-channel FETsProduct specification April 1995NXP Semiconductors Product specificationPMBF4391;N-channel FETsPMBF4392; PMBF4393DESCRIPTIONSymmetrical silicon n-channel depletion type junction field-effect transistors on a plastic microminiature envelope intended for application in thick and thin-film c
pmbf4391 pmbf4392 pmbf4393 cnv 2.pdf

DISCRETE SEMICONDUCTORSDATA SHEETPMBF4391; PMBF4392;PMBF4393N-channel FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBF4391;N-channel FETsPMBF4392; PMBF4393DESCRIPTIONSymmetrical silicon n-channeldepletion type junction field-effecttransistors on a plasticmicrominiature envelope intended f
Datasheet: PHX6ND50E , PHX7N60E , PHX8N50E , PHX8ND50E , PMBF4391 , PMBF4392 , PMBF4393 , PMBF4416 , IRF630 , PMBF5484 , PMBF5485 , PMBF5486 , PMBFJ108 , PMBFJ109 , PMBFJ110 , PMBFJ111 , PMBFJ112 .
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