All MOSFET. RSH110N03TB1 Datasheet

 

RSH110N03TB1 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RSH110N03TB1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
   Package: SOP-8

 RSH110N03TB1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSH110N03TB1 Datasheet (PDF)

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 rsh110n03tb1.pdf

RSH110N03TB1 RSH110N03TB1

4V Drive Nch MOSFET RSH110N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: AUIRFSL8403 | IXFH20N100P | HUF76429D3

 

 
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