All MOSFET. RSH110N03TB1 Datasheet

 

RSH110N03TB1 Datasheet and Replacement


   Type Designator: RSH110N03TB1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 410 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
   Package: SOP-8
 

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RSH110N03TB1 Datasheet (PDF)

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RSH110N03TB1

4V Drive Nch MOSFET RSH110N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensionsPackaging specifications Inner circuit (8) (7) (6) (5) (8) (7) (6) (5)Package

Datasheet: RSF010P03TL , RSF014N03TL , RSH065N03TB1 , RSH065N06TB1 , RSH070N05TB1 , RSH070P05TB1 , RSH090N03TB1 , RSH100N03TB1 , IRF4905 , RSJ151P10 , RSJ400N06FRA , RSJ400N10 , RSL020P03FRA , RSL020P03TR , RSM002P03T2L , RSM5853P , RSQ015N06TR .

History: NTD30N02G | CEP09N7G | RSH090N03TB1 | CS4N150VF | APT106N60B2C6 | BUK7Y98-80E

Keywords - RSH110N03TB1 MOSFET datasheet

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