RSJ400N10 Specs and Replacement
Type Designator: RSJ400N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 270 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SC-83
RSJ400N10 substitution
- MOSFET ⓘ Cross-Reference Search
RSJ400N10 datasheet
rsj400n10.pdf
RSJ400N10 Nch 100V 40A Power MOSFET Datasheet lOutline (2) VDSS 100V LPTS (SC-83) RDS(on) (Max.) 27mW ID 40A (1) PD 50W (3) lFeatures lInner circuit (3) 1) Low on-resistance. (1) Gate *1 2) Fast switching speed. (2) Drain (3) Source (1) 3) Drive circuits can be simple. *2 4) Parallel use is easy. *1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead pl... See More ⇒
rsj400n06fra.pdf
Data Sheet AEC-Q101 Qualified 10V Drive Nch MOSFET RSJ400N06 RSJ400N06FRA Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High current 2.54 0.4 0.78 3) High power Package 2.7 5.08 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Taping 1 Type Co... See More ⇒
rsj400n06.pdf
Data Sheet 10V Drive Nch MOSFET RSJ400N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET LPTS 10.1 4.5 1.3 Features 1.24 1) Low on-resistance. 2) High current 2.54 0.4 0.78 3) High power Package 2.7 5.08 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Taping 1 Type Code TL Basic ordering unit (pieces... See More ⇒
Detailed specifications: RSH065N06TB1, RSH070N05TB1, RSH070P05TB1, RSH090N03TB1, RSH100N03TB1, RSH110N03TB1, RSJ151P10, RSJ400N06FRA, AON6380, RSL020P03FRA, RSL020P03TR, RSM002P03T2L, RSM5853P, RSQ015N06TR, RSQ020N03FRA, RSQ020N03TR, RSQ025P03FRA
Keywords - RSJ400N10 MOSFET specs
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