RSJ400N10 Datasheet and Replacement
Type Designator: RSJ400N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.027 Ohm
Package: SC-83
RSJ400N10 substitution
RSJ400N10 Datasheet (PDF)
rsj400n10.pdf

RSJ400N10 Nch 100V 40A Power MOSFET DatasheetlOutline(2) VDSS100V LPTS(SC-83)RDS(on) (Max.)27mWID40A(1) PD50W (3) lFeatures lInner circuit(3) 1) Low on-resistance.(1) Gate *1 2) Fast switching speed.(2) Drain (3) Source (1) 3) Drive circuits can be simple.*2 4) Parallel use is easy.*1 ESD PROTECTION DIODE *2 BODY DIODE 5) Pb-free lead pl
rsj400n06fra.pdf

Data SheetAEC-Q101 Qualified10V Drive Nch MOSFET RSJ400N06RSJ400N06FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High current2.54 0.40.783) High power Package2.75.08(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping1TypeCo
rsj400n06.pdf

Data Sheet10V Drive Nch MOSFET RSJ400N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETLPTS10.1 4.51.3Features1.241) Low on-resistance.2) High current2.54 0.40.783) High power Package2.75.08(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage Taping1TypeCode TLBasic ordering unit (pieces
Datasheet: RSH065N06TB1 , RSH070N05TB1 , RSH070P05TB1 , RSH090N03TB1 , RSH100N03TB1 , RSH110N03TB1 , RSJ151P10 , RSJ400N06FRA , IRLZ44N , RSL020P03FRA , RSL020P03TR , RSM002P03T2L , RSM5853P , RSQ015N06TR , RSQ020N03FRA , RSQ020N03TR , RSQ025P03FRA .
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