RSQ015N06TR Datasheet and Replacement
Type Designator: RSQ015N06TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 28 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TSMT6
RSQ015N06TR substitution
RSQ015N06TR Datasheet (PDF)
rsq015n06tr.pdf

RSQ015N06 Nch 60V 1.5A Power MOSFET DatasheetlOutline(6) VDSS TSMT6 60V(5) (4) RDS(on) (Max.)290mW(1) ID1.5A(2) PD1.25W(3) lFeatures lInner circuit(1) Drain 1) Low on - resistance.(2) Drain 2) Built-in G-S Protection Diode.(3) Gate (4) Source 3) Small Surface Mount Package (TSMT6).(5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant
rsq015n06.pdf

4V Drive Nch MOSFET RSQ015N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT61.0MAX2.90.85 1.90.95 0.95 0.7(6) (5) (4) Features 1) Low On-resistance. 0~0.12) Small Surface Mount Package (TSMT6). (1) (2) (3)1pin mark0.160.4Abbreviated symbol : PX Application Inner circuit Switching (6) (5) (4)2 Packaging specifications Package T
rsq015p10.pdf

Data Sheet4V Drive Pch MOSFET RSQ015P10 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTSMT6Features1) Low on-resistance.2) Low voltage drive(4V).3) Small surface mount package (TSMT6).Abbreviated symbol : ZN ApplicationSwitching Packaging specifications Inner circuitPackage Taping(6) (5) (4)TypeCode TR2Basic ordering unit (p
Datasheet: RSH110N03TB1 , RSJ151P10 , RSJ400N06FRA , RSJ400N10 , RSL020P03FRA , RSL020P03TR , RSM002P03T2L , RSM5853P , 20N50 , RSQ020N03FRA , RSQ020N03TR , RSQ025P03FRA , RSQ025P03TR , RSQ030P03TR , RSQ035N03FRA , RSQ035N03TR , RSQ035P03FRA .
History: H5N3005LM
Keywords - RSQ015N06TR MOSFET datasheet
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RSQ015N06TR replacement
History: H5N3005LM



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