RSR025P03FRA
MOSFET. Datasheet pdf. Equivalent
Type Designator: RSR025P03FRA
Marking Code: WY
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 2.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 5.4
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 105
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.098
Ohm
Package:
TSMT3
RSR025P03FRA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSR025P03FRA
Datasheet (PDF)
..1. Size:979K rohm
rsr025p03fra.pdf 
RSR025P03FRARSR025P03TransistorsAEC-Q101 Qualified4V Drive Pch MOSFETRSR025P03RSR025P03FRA Structure Dimensions (Unit : mm)Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) (1) (2)0.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevia
5.1. Size:105K rohm
rsr025p03tl.pdf
RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WY Applications(3)
5.2. Size:106K rohm
rsr025p03.pdf
RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WY Applications(3)
8.1. Size:65K rohm
rsr025n03.pdf
RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol
8.2. Size:63K rohm
rsr025n03tl.pdf
RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol
8.3. Size:1170K rohm
rsr025n05.pdf
Data Sheet4V Drive Nch MOSFET RSR025N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features(3)1) Low on-resistance.2) Fast switching speed.(1) (2)3) Drive circuits can be simple.4) Parallel use is easy.ApplicationSwitchingPackaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces) 300
8.4. Size:926K rohm
rsr025n03fra.pdf
RSR025N03FRARSR025N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RSR025N03FRARSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET2.90.850.4 0.7( )3 Features 1) Low on-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same d
8.5. Size:979K rohm
rsr025n05fra.pdf
RSR025N05FRA Nch 45V 2.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS TSMT3 45V(3) RDS(on) (Max.)100mW(1) ID2.5APD1.0W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTECTI
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