Справочник MOSFET. RSR025P03FRA

 

RSR025P03FRA MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: RSR025P03FRA
   Маркировка: WY
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 1 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 2.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 5.4 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 105 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.098 Ohm
   Тип корпуса: TSMT3

 Аналог (замена) для RSR025P03FRA

 

 

RSR025P03FRA Datasheet (PDF)

 ..1. Size:979K  rohm
rsr025p03fra.pdf

RSR025P03FRA RSR025P03FRA

RSR025P03FRARSR025P03TransistorsAEC-Q101 Qualified4V Drive Pch MOSFETRSR025P03RSR025P03FRA Structure Dimensions (Unit : mm)Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) (1) (2)0.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevia

 5.1. Size:105K  rohm
rsr025p03tl.pdf

RSR025P03FRA RSR025P03FRA

RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WY Applications(3)

 5.2. Size:106K  rohm
rsr025p03.pdf

RSR025P03FRA RSR025P03FRA

RSR025P03 Transistors 4V Drive Pch MOSFET RSR025P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WY Applications(3)

 8.1. Size:65K  rohm
rsr025n03.pdf

RSR025P03FRA RSR025P03FRA

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol

 8.2. Size:63K  rohm
rsr025n03tl.pdf

RSR025P03FRA RSR025P03FRA

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol

 8.3. Size:1170K  rohm
rsr025n05.pdf

RSR025P03FRA RSR025P03FRA

Data Sheet4V Drive Nch MOSFET RSR025N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features(3)1) Low on-resistance.2) Fast switching speed.(1) (2)3) Drive circuits can be simple.4) Parallel use is easy.ApplicationSwitchingPackaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces) 300

 8.4. Size:926K  rohm
rsr025n03fra.pdf

RSR025P03FRA RSR025P03FRA

RSR025N03FRARSR025N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RSR025N03FRARSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET2.90.850.4 0.7( )3 Features 1) Low on-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same d

 8.5. Size:979K  rohm
rsr025n05fra.pdf

RSR025P03FRA RSR025P03FRA

RSR025N05FRA Nch 45V 2.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS TSMT3 45V(3) RDS(on) (Max.)100mW(1) ID2.5APD1.0W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTECTI

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