RSS050P03TB Datasheet and Replacement
Type Designator: RSS050P03TB
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: SOP-8
RSS050P03TB substitution
RSS050P03TB Datasheet (PDF)
rss050p03fu6tb rss050p03tb.pdf

RSS050P03 Transistors Switching (-30V, -5.0A) RSS050P03 External dimensions (Unit : mm) Features 1) Low On-resistance. SOP82) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (SOP8). 3.9 Application 6.0Power switching, DC / DC converter. 0.4Min.Each lead has same dimensions Structure Silicon P-channel MOS FET Packaging specifications Eq
crst055n08n crss052n08n.pdf

CRST055N08N, CRSS052N08N() SkyMOS1 N-MOSFET 85V, 4.6m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)4.6m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested1
crst060n10n crss057n10n.pdf

CRST060N10N, CRSS057N10N() SkyMOS1 N-MOSFET 100V, 5.3m, 120AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 100V Extremely low on-resistance RDS(on) RDS(on)5.3m Excellent QgxRDS(on) product(FOM) ID 120A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested
Datasheet: RSR025N03TL , RSR025N05FRA , RSR025P03FRA , RSR025P03TL , RSR030N06TL , RSS040P03FU6TB , RSS040P03TB , RSS050P03FU6TB , MMIS60R580P , RSS060P05 , RSS060P05FRA , RSS065N03FU6TB , RSS065N03TB , RSS065N06FU6TB , RSS070N05 , RSS070P05 , RSS075P03FU6TB .
History: BLM6G10-30G | 2SK222
Keywords - RSS050P03TB MOSFET datasheet
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History: BLM6G10-30G | 2SK222



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