RSS065N03TB MOSFET. Datasheet pdf. Equivalent
Type Designator: RSS065N03TB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 6.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 6.1 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
Package: SOP-8
RSS065N03TB Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSS065N03TB Datasheet (PDF)
rss065n03fu6tb rss065n03tb.pdf
RSS065N03 Transistors Switching (30V, 6.5A) RSS065N03 External dimensions (Unit : mm) Features 1) Low on-resistance. ROHM:SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Applications 0.20.1Power switching, DC / DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Eq
rss065n06fu6tb.pdf
RSS065N06 Transistors 4V Drive Nch MOSFET RSS065N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit(8) (7) (6) (5) (8) (7) (6) (5)Package Tapi
rss065n06.pdf
RSS065N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL
rss060p05fra.pdf
RSS060P05FRARSS060P05TransistorAEC-Q101 Qualified4V Drive Pch MOSFETRSS060P05RSS060P05FRA Structure Dimensions (Unit : mm)Silicon P-channel SOP85.0MOSFET1.750.4(8) (5) Features1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark ApplicationsEach lead has same dimensionsPower switching , DC / DC conv
rss060p05.pdf
RSS060P05 Transistor 4V Drive Pch MOS FET RSS060P05 Structure External dimensions (Unit : mm) Silicon P-channel SOP85.0MOS FET 1.750.4(8) (5) Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark Applications Each lead has same dimensionsPower switching , DC / DC converter , Inverter Packaging
crst065n08n crss063n08n.pdf
CRST065N08N, CRSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)5.6m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100
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