RSS065N03TB MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RSS065N03TB
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 2 W
Предельно допустимое напряжение сток-исток |Uds|: 30 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 6.5 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 6.1 nC
Время нарастания (tr): 8 ns
Выходная емкость (Cd): 155 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.026 Ohm
Тип корпуса: SOP-8
Аналог (замена) для RSS065N03TB
RSS065N03TB Datasheet (PDF)
rss065n03fu6tb rss065n03tb.pdf
RSS065N03 Transistors Switching (30V, 6.5A) RSS065N03 External dimensions (Unit : mm) Features 1) Low on-resistance. ROHM:SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Applications 0.20.1Power switching, DC / DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Eq
rss065n06fu6tb.pdf
RSS065N06 Transistors 4V Drive Nch MOSFET RSS065N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET SOP8 Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8). Application Each lead has same dimensionsSwitching Packaging specifications Equivalent circuit(8) (7) (6) (5) (8) (7) (6) (5)Package Tapi
rss065n06.pdf
RSS065N06www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition TrenchFET Power MOSFET0.025 at VGS = 10 V 7.660 10.5 nC Optimized for Low Side Synchronous0.030 at VGS = 4.5 V 6.5Rectifier Operation 100 % Rg and UIS TestedAPPLICATIONSD CCFL
rss060p05fra.pdf
RSS060P05FRARSS060P05TransistorAEC-Q101 Qualified4V Drive Pch MOSFETRSS060P05RSS060P05FRA Structure Dimensions (Unit : mm)Silicon P-channel SOP85.0MOSFET1.750.4(8) (5) Features1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark ApplicationsEach lead has same dimensionsPower switching , DC / DC conv
rss060p05.pdf
RSS060P05 Transistor 4V Drive Pch MOS FET RSS060P05 Structure External dimensions (Unit : mm) Silicon P-channel SOP85.0MOS FET 1.750.4(8) (5) Features 1) Built-in G-S Protection Diode. 2) Small and Surface Mount Package (SOP8). (1) (4)0.21.271pin mark Applications Each lead has same dimensionsPower switching , DC / DC converter , Inverter Packaging
crst065n08n crss063n08n.pdf
CRST065N08N, CRSS063N08N() SkyMOS1 N-MOSFET 85V, 5.6m, 80AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS1 technology 85V Extremely low on-resistance RDS(on) RDS(on)5.6m Excellent QgxRDS(on) product(FOM) ID 80A Qualified according to JEDEC criteriaApplications Motor control and drive100% Avalanche Tested100
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