All MOSFET. RSS130N03FU6TB Datasheet

 

RSS130N03FU6TB Datasheet and Replacement


   Type Designator: RSS130N03FU6TB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: SOP-8
 

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RSS130N03FU6TB Datasheet (PDF)

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RSS130N03FU6TB

RSS130N03 Transistors Switching (30V, 13A) RSS130N03 Features External dimensions (Unit : mm) 1) Low on-resistance. SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Application 0.20.1Power switching, DC/DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Equivalent circui

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History: INK0001BM1 | MTN2N65AI3 | UTT30N10 | NCEP25N10AG | MTM68410 | ELM34605AA-N | SM6F24NSFP

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