RSS130N03FU6TB Datasheet and Replacement
Type Designator: RSS130N03FU6TB
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 30 nS
Cossⓘ - Output Capacitance: 605 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
Package: SOP-8
RSS130N03FU6TB substitution
RSS130N03FU6TB Datasheet (PDF)
rss130n03fu6tb rss130n03tb.pdf

RSS130N03 Transistors Switching (30V, 13A) RSS130N03 Features External dimensions (Unit : mm) 1) Low on-resistance. SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Application 0.20.1Power switching, DC/DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Equivalent circui
Datasheet: RSS105N03FU6TB , RSS105N03TB , RSS110N03FU6TB , RSS110N03TB , RSS120N03FU6TB , RSS120N03TB , RSS125N03FU6TB , RSS125N03TB , 50N06 , RSS130N03TB , RSS140N03TB , RSU002P03T106 , RSY200N05TL , RT1A040ZPTR , RT1A050ZPTR , RT3J11M , RT3J22M .
History: HGW059N12SL | SI3879DV | IRFU010 | 2N6968 | SI4418DY | HGW059N12S
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History: HGW059N12SL | SI3879DV | IRFU010 | 2N6968 | SI4418DY | HGW059N12S



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