All MOSFET. RSS130N03FU6TB Datasheet

 

RSS130N03FU6TB MOSFET. Datasheet pdf. Equivalent


   Type Designator: RSS130N03FU6TB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 605 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0081 Ohm
   Package: SOP-8

 RSS130N03FU6TB Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSS130N03FU6TB Datasheet (PDF)

 ..1. Size:58K  rohm
 rss130n03fu6tb rss130n03tb.pdf

RSS130N03FU6TB RSS130N03FU6TB

RSS130N03 Transistors Switching (30V, 13A) RSS130N03 Features External dimensions (Unit : mm) 1) Low on-resistance. SOP82) Built-in G-S Protection Diode. 5.00.23) Small and Surface Mount Package (SOP8). Application 0.20.1Power switching, DC/DC converter. 0.40.11.270.1 Structure Each lead has same dimensionsSilicon N-channel MOS FET Equivalent circui

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: APT1002RCN

 

 
Back to Top