RT3J11M Specs and Replacement
Type Designator: RT3J11M
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.1 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 5.2 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
Package: SC-88
RT3J11M substitution
- MOSFET ⓘ Cross-Reference Search
RT3J11M datasheet
rt3j11m.pdf
PRELIMINARY RT3J11M Composite Transistor For high speed switching Silicon -channel MOSFET DESCRIPTION OUTLINE DRAWING Unit mm RT3J11M is a composite transistor built with two INJ0001AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low volt... See More ⇒
Detailed specifications: RSS125N03TB, RSS130N03FU6TB, RSS130N03TB, RSS140N03TB, RSU002P03T106, RSY200N05TL, RT1A040ZPTR, RT1A050ZPTR, IRF640N, RT3J22M, RT3J33M, RT3J55M, RT3K11M, RT3K22M, RT3K33M, RT3K44M, RT3K66M
Keywords - RT3J11M MOSFET specs
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