All MOSFET. RT3J11M Datasheet

 

RT3J11M Datasheet and Replacement


   Type Designator: RT3J11M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.1 A
   Tj ⓘ - Maximum Junction Temperature: 125 °C
   Cossⓘ - Output Capacitance: 5.2 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: SC-88
 

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RT3J11M Datasheet (PDF)

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RT3J11M

PRELIMINARY RT3J11MComposite Transistor For high speed switchingSilicon -channel MOSFETDESCRIPTION OUTLINE DRAWING Unitmm RT3J11M is a composite transistor built with two INJ0001AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low volt

Datasheet: RSS125N03TB , RSS130N03FU6TB , RSS130N03TB , RSS140N03TB , RSU002P03T106 , RSY200N05TL , RT1A040ZPTR , RT1A050ZPTR , IRF630 , RT3J22M , RT3J33M , RT3J55M , RT3K11M , RT3K22M , RT3K33M , RT3K44M , RT3K66M .

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