RT3J11M Datasheet and Replacement

   Type Designator: RT3J11M
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 50 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id|ⓘ - Maximum Drain Current: 0.1 A
   Tjⓘ - Maximum Junction Temperature: 125 °C
   Cossⓘ - Output Capacitance: 5.2 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7 Ohm
   Package: SC-88
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