RT3J22M PDF Specs and Replacement
Type Designator: RT3J22M
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 7.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: SC-88
RT3J22M substitution
RT3J22M PDF Specs
rt3j22m.pdf
PRELIMINARY RT3J22M Composite Transistor For high speed switching Silicon -channel MOSFET DESCRIPTION OUTLINE DRAWING Unit mm RT3J22M is a composite transistor built with two INJ0002AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low volt... See More ⇒
Detailed specifications: RSS130N03FU6TB , RSS130N03TB , RSS140N03TB , RSU002P03T106 , RSY200N05TL , RT1A040ZPTR , RT1A050ZPTR , RT3J11M , IRFP260N , RT3J33M , RT3J55M , RT3K11M , RT3K22M , RT3K33M , RT3K44M , RT3K66M , RT3U11M .
History: QS8K11
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
