RT3K22M Specs and Replacement
Type Designator: RT3K22M
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 6.8 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: SC-88
RT3K22M substitution
- MOSFET ⓘ Cross-Reference Search
RT3K22M datasheet
rt3k22m.pdf
RT3K22M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit mm RT3K22M is a composite transistor built with two INK0002AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth... See More ⇒
Detailed specifications: RSY200N05TL, RT1A040ZPTR, RT1A050ZPTR, RT3J11M, RT3J22M, RT3J33M, RT3J55M, RT3K11M, 10N60, RT3K33M, RT3K44M, RT3K66M, RT3U11M, RT3U22M, RT3U33M, RTE002P02TL, RTF010P02
Keywords - RT3K22M MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
