RT3K22M Datasheet and Replacement
Type Designator: RT3K22M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 0.2 A
Tj ⓘ - Maximum Junction Temperature: 125 °C
Cossⓘ - Output Capacitance: 6.8 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.1 Ohm
Package: SC-88
RT3K22M substitution
RT3K22M Datasheet (PDF)
rt3k22m.pdf

RT3K22MComposite Transistor For high speed switchingSilicon N-channel MOSFETDESCRIPTION OUTLINE DRAWING Unitmm RT3K22M is a composite transistor built with two INK0002AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth
Datasheet: RSY200N05TL , RT1A040ZPTR , RT1A050ZPTR , RT3J11M , RT3J22M , RT3J33M , RT3J55M , RT3K11M , 7N65 , RT3K33M , RT3K44M , RT3K66M , RT3U11M , RT3U22M , RT3U33M , RTE002P02TL , RTF010P02 .
History: SSG9435BDY | SSG6612N | GP1M005A050XX | RQJ0203WGDQA | AM2301P | RQJ0201UGDQA | 3N124
Keywords - RT3K22M MOSFET datasheet
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History: SSG9435BDY | SSG6612N | GP1M005A050XX | RQJ0203WGDQA | AM2301P | RQJ0201UGDQA | 3N124



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