RT3K33M Specs and Replacement

Type Designator: RT3K33M

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 8.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: SC-88

RT3K33M substitution

- MOSFET ⓘ Cross-Reference Search

 

RT3K33M datasheet

 ..1. Size:147K  isahaya
 rt3k33m.pdf pdf_icon

RT3K33M

RT3K33M Composite Transistor For high speed switching Silicon N-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit mm RT3K33M is a composite transistor built with two INK0003AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive by low voltage is possible. Vth... See More ⇒

Detailed specifications: RT1A040ZPTR, RT1A050ZPTR, RT3J11M, RT3J22M, RT3J33M, RT3J55M, RT3K11M, RT3K22M, AON6414A, RT3K44M, RT3K66M, RT3U11M, RT3U22M, RT3U33M, RTE002P02TL, RTF010P02, RTF010P02TL

Keywords - RT3K33M MOSFET specs

 RT3K33M cross reference

 RT3K33M equivalent finder

 RT3K33M pdf lookup

 RT3K33M substitution

 RT3K33M replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.