RT3U33M Specs and Replacement

Type Designator: RT3U33M

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.2 A

Tj ⓘ - Maximum Junction Temperature: 125 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 8.5 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: SC-88

RT3U33M substitution

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RT3U33M datasheet

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RT3U33M

PRELIMINARY RT3U33M Composite Transistor For high speed switching Silicon N-channel + P-channel MOSFET DESCRIPTION OUTLINE DRAWING Unit mm RT3U33M is a composite transistor built with INK0003AX and INJ0003AX chips in SC-88 package. 2.1 1.25 FEATURE Input impedance is high, and not necessary to consider a drive electric current. Vth is low, and drive... See More ⇒

Detailed specifications: RT3J55M, RT3K11M, RT3K22M, RT3K33M, RT3K44M, RT3K66M, RT3U11M, RT3U22M, 7N65, RTE002P02TL, RTF010P02, RTF010P02TL, RTF015N03TL, RTF015P02TL, RTF020P02, RTF020P02TL, RTF025N03FRA

Keywords - RT3U33M MOSFET specs

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