PMBFJ113
MOSFET. Datasheet pdf. Equivalent
Type Designator: PMBFJ113
Type of Transistor: JFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Id|ⓘ - Maximum Drain Current: 0.002
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Rdsⓘ - Maximum Drain-Source On-State Resistance: 100
Ohm
Package:
SOT23
PMBFJ113
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PMBFJ113
Datasheet (PDF)
..1. Size:32K philips
pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf 
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ111;PMBFJ112; PMBFJ113N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ111;N-channel junction FETsPMBFJ112; PMBFJ113FEATURES High-speed switching Interchangeability of drain andsource connections3handbook, halfpage Low
..2. Size:47K philips
pmbfj111 pmbfj112 pmbfj113.pdf
PMBFJ111; PMBFJ112;PMBFJ113N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
7.1. Size:32K philips
pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ108;PMBFJ109; PMBFJ110N-channel junction FETsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationPMBFJ108;N-channel junction FETsPMBFJ109; PMBFJ110FEATURES High-speed switching Interchangeability of drain andsource connections Low RDSon at zero gate volt
7.2. Size:46K philips
pmbfj108 pmbfj109 pmbfj110.pdf
PMBFJ108; PMBFJ109;PMBFJ110N-channel junction FETsRev. 03 4 August 2004 Product data sheet1. Product profile1.1 General descriptionSymmetrical N-channel junction FETs in a SOT23 package.1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (
8.1. Size:31K philips
pmbfj174 pmbfj175 pmbfj176 pmbfj177 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETPMBFJ174 to 177P-channel silicon field-effecttransistorsApril 1995Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channeljunction FETs in plasticmicrominiature SOT23envelopes.They are int
8.2. Size:228K philips
pmbfj174 pmbf175 pmbf176 pmbf177.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
8.3. Size:57K nxp
pmbfj174 pmbfj175 pmbfj176 pmbfj177.pdf
DISCRETE SEMICONDUCTORS DATA SHEETPMBFJ174 to 177P-channel silicon field-effect transistorsProduct specification April 1995NXP Semiconductors Product specificationP-channel silicon field-effect transistors PMBFJ174 to 177DESCRIPTIONSilicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.They are intended for application with analogue swi
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