PMBFJ113. Аналоги и основные параметры

Наименование производителя: PMBFJ113

Тип транзистора: JFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.3 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 0.002 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 100 Ohm

Тип корпуса: SOT23

Аналог (замена) для PMBFJ113

- подборⓘ MOSFET транзистора по параметрам

 

PMBFJ113 даташит

 ..1. Size:32K  philips
 pmbfj111 pmbfj112 pmbfj113 cnv 2.pdf pdf_icon

PMBFJ113

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ111; N-channel junction FETs PMBFJ112; PMBFJ113 FEATURES High-speed switching Interchangeability of drain and source connections 3 handbook, halfpage Low

 ..2. Size:47K  philips
 pmbfj111 pmbfj112 pmbfj113.pdf pdf_icon

PMBFJ113

PMBFJ111; PMBFJ112; PMBFJ113 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

 7.1. Size:32K  philips
 pmbfj108 pmbfj109 pmbfj110 cnv 2.pdf pdf_icon

PMBFJ113

DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs April 1995 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification PMBFJ108; N-channel junction FETs PMBFJ109; PMBFJ110 FEATURES High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate volt

 7.2. Size:46K  philips
 pmbfj108 pmbfj109 pmbfj110.pdf pdf_icon

PMBFJ113

PMBFJ108; PMBFJ109; PMBFJ110 N-channel junction FETs Rev. 03 4 August 2004 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel junction FETs in a SOT23 package. 1.2 Features High-speed switching Interchangeability of drain and source connections Low RDSon at zero gate voltage (

ПОКАЗАТЬ ЕЩЁ

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